Ferroelectric Thin Films and Devices



The major research mainly covers the emerging non-volatile memories and sensors based on ferroelectrics. Conduct comprehensive studies of ferroelectric thin film growth, and the rich physical phenomenon emerged on the interface between ferroelectric and other type materials such as metals, semiconductors, and ferromagnets, which include the magnetoelectric coupling, the field induced resistivity, the optoelectronic effect, the strain engineering, and size effect, etc. Understanding the universal working mechanisms correlated with these phenomenon, by combined the advanced microstructure and transport characterization technologies. Based on which we aim to develop non-volatile memories and sensors such as tunnel junctions, diode, and transistors, with low power consumption, high storage density and sensibility.